Pengke li, jing li, lan qing, hanan dery, and ian appelbaum, anisotropy driven spin relaxation in germanium, phys. Ian appelbaum physical sciences complex university of maryland, college park. Recent advances in successful operation of siliconbased devices where transport is dependent on electron magnetic moment, or spin, could provide a path to a future alternative for logic processing. Ian appelbaum is looking to spin his research on the magnetic properties of electrons to get more electronic enhancements from semiconductors. Appelbaum wins depscor grant for spintronics research. We hope were with spintronics where bell labs was with semiconductor electronics in 1948, appelbaum said. Pdf after the first unequivocal demonstration of spin transport in graphene. Spintronics is the field in which both charge and spin degrees of freedom are used to realize functions otherwise not accessible. Researchers put spin in silicon, advance new age of electronics. A unique spin depolarization mechanism, induced by the presence of gfactor anisotropy and intervalley scattering, is revealed by spintransport measurements on longdistance germanium devices in a magnetic field longitudinal to the initial spin orientation.
Physicist ian appelbaum puts new spin on semiconductors. Abstract abstract eccs0746757 ian appelbaum, university of delaware the objective of this research is to experimentally understand the necessary device physics concepts required for development of siliconbased spintronics. Spintronics means spin transport electronics, where spin is the intrinsic angular momentum of electrons. The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Silicon is also one of the most commonly used semiconductor in microelectronics industry. Ian appelbaum professor of physics university of maryland. This angular momentum is coupled to a magnetic moment, so each electron. This is motivated by the need to demonstrate a scheme for electronic logic processing alternative to the presentlyused chargebased physical paradigm now reaching its. Illuminating spinpolarized bloch wavefunction projection from. Over the last decade, spintronic technology has found its way into consumer electronics, used in devices like cell phones, hard drives, and ram. Ian appelbaum right, university of delaware assistant professor of electrical and computer engineering, and doctoral student biqin huang holding a silicon spin chip are making pioneering discoveries in spintronics, which seeks to harness an electrons spin in addition to its charge to make cheaper, faster, less powerhungry electronics. A spin transport model is employed to study the effects of spin dephasing induced by diffusiondriven transittime uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. Coey tunneling magnetoresistance and spin transfer with ga,mnas, h.
He is very dedicated to make sure his student understand the material. The basics of this spin electronics spintronics technology are discussed and the specific methods necessary for application to silicon are described. Ian appelbaum physical sciences complex university of maryland, college park 301 3377461. This site supported by spintronics research network of japan spin rnj. The spin relaxation process of diamond crystal struc. Symmetry, distorted band structure, and spinorbit coupling of group. Ian appelbaum curriculum vitae address physical sciences complex, university of maryland, college park phone 301 3377461. May 17, 2007 coherent spin transport in silicon has remained elusive despite its theoretically very long spin lifetime, which would make it an ideal material for spintronics applications. Jing li, biqin huang, and ian appelbaum, oblique hanle effect in semiconductor spintronic devices, applied physics letters 92, 142507 2008.
Apr 22, 2008 a spintransport model is employed to study the effects of spin dephasing induced by diffusiondriven transittime uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. Spintronics promises to provide stable, highdensity storage, and has been shown to be at its best when applied in semiconductors rather than metals because. The objective of this research is to experimentally understand the necessary device physics concepts required for development of siliconbased spintronics. Spin dephasing in driftdominated semiconductor spintronics. That year, bell announced the invention of the transistor, which laid the foundation for modern electronics. University of delaware spintronics researcher image. Spintronics emerged from discoveries in the 1980s concerning spindependent electron transport phenomena in solidstate devices. University of maryland, college park cited by 3905.
Ian appelbaum and his colleagues at the university of delaware have now made the first siliconbased spintronic. Li, pengke, and ian appelbaum 2014, electrons and holes. May 20, 2007 the experiment, conducted in the laboratory of ian appelbaum, assistant professor of electrical and computer engineering at ud, with doctoral student biqin huang, and in collaboration with douwe. Jason palmer published silicon and spintronics, together at last. Researchers race ahead with latest spintronics achievement. Department of defense experimental program to stimulate competitive research. Uds appelbaum wins nsf career award for research on. Ud researchers put spin in silicon, advance new age of. Uds appelbaum wins nsf career award for research on silicon. The spintronics research center at keio university performs stateoftheart spintronics research. Ian appelbaum university of maryland, college park verified email at physics.
Professor appelbaum is one of the most clear and inspirational teacher. More than 25 individual silicon spintransport devices are. Teaching courses on device physics, wave physics, and spintronics magnetoelectronics postdoctoral fellow 20032004 harvard university division of engineering and applied sciences, narayanamurti lab. This is motivated by the need to demonstrate a scheme for electronic logic processing alternative to the presentlyused charge. Appelbaum s semiconductor spintronics laboratory expert credentials. Ian appelbaum, university of delaware assistant professor of electrical and computer engineering, is the recipient of the faculty early career development award from the national science foundation for his research on spintronics. More than 25 individual silicon spintransport devices are represented, one within each tiny wire grid, on this ceramic chip holder. Ian appelbaum, spintronics researcher, university of. Introduction to spin polarized ballistic hot electron injection and detection in silicon. Professor hanan dery please post nebraska center for materials. Spintronics breaks the silicon barrier scientific american.
Researchers put spin in silicon, advance new age of. Abstract eccs0746757 ian appelbaum, university of delaware the objective of this research is to experimentally understand the necessary device physics concepts required for development of siliconbased spintronics. The worlds first silicon spintransport devices, fabricated and measured in ian appelbaum s lab at the university of delaware. View ian appelbaums profile on linkedin, the worlds largest professional. Ian appelbaum, assistant professor of electrical and computer engineering, is the recipient of the faculty early career development award from the national science foundation for his research on spintronics.
He will help you to set up the basic ideas and the whole frame of spintronics. Spin lifetime in silicon in the presence of parasitic. Appelbaum, \oblique hanle e ect in semiconductor spintronic devices, appl. May 16, 2007 to us this is the holy grail of semiconductor spintronics, says physicist and electrical engineer ian appelbaum of the university of delaware in newark, who worked on the experiment. Ian appelbaum global maryland, university of maryland. Electronic materials find, read and cite all the research you need on researchgate. Appelbaum s research is now funded in part with a nearly halfmillion dollar grant from the u. Researchers take silicon out for a spin electronic design. Iiiv semiconductors, carsten timm magnetism of dilute oxides, j.
It is found that in the ohmic regime, dephasing is independent of transit length and determined primarily by voltage drop across the spintransport region. Fundamental measurements of spin polarization and spin precession are demonstrated. Ian appelbaum university of delaware go with the flow using a novel spintronic device with a pair of ferromagnetic spin filters that sandwich a silicon substrate, delaware researchers are able to detect and control a flow of electron spins through silicon. Ian appelbaum is an american physicist, currently at the university of maryland and an elected fellow of the american physical society. Pdf power dissipation in spintronic devices out of. Huang and ian appelbaum, spin dephasing in driftdominated semiconductor spintronics devices, phys. Ud researchers advance new age of electronics science 2.
Spintronics, or spin electronics, is an emerging field of basic and applied research in physics and. Delaware the information processed in the microelectronics of modern computers is encoded in the presence or absence of electron charge, representing the familiar 1s and 0s of boolean logic. Getting a useful spin current into a semiconductor in the first place is a different matter see box p48. Ian appelbaum, now at the university of maryland, us, and coworkers managed to transport spinpolarised electrons in silicon over a distance of several millimetres. Added organic silicon and spintronics, together at last. Now, researchers at the university of delaware have. Semiconductors are the materials basis for microelectronics because we can easily manipulate this electron. The experiment, conducted in the laboratory of ian appelbaum, assistant professor of electrical and computer engineering at ud, with doctoral student biqin huang, and in collaboration with douwe monsma, cofounder of cambridge nanotech in cambridge, mass. It is found that in the ohmic regime, dephasing is independent of transit length, and determined primarily by voltage drop across the spin transport region.
Symmetry, distorted band structure, and spinorbit coupling of groupiii metalmonochalcogenide monolayers, physical. Ian appelbaum, assistant professor of electrical and computer engineering at the university of delaware, and his research group are advancing the new field of spintronics. Quantum limits of power dissipation in spintronic computing are estimated. Professor ian appelbaum department of physics in semiconductor spintronics, silicon attracts great attention due to its long electron spin lifetime. Our subsequent observations of very long spin lifetimes and transit lengths 2 have impact on prospects for silicon spintronics as the basis for a new paradigm of information processing. May 16, 2007 a new spintronics device is a key step toward faster, more powerful computers. Others, including spin splitting and wavefunction spin mixing, are directly driven by spin orbit. Ian appelbaum 1, biqin huang 1, douwe monsma 2 1 university of delaware, 2 cambridge nanotech, inc. Performing organization names and addresses university of maryland college park, md 20742 8. May 18, 2007 the worlds first silicon spintransport devices, fabricated and measured in ian appelbaum s lab at the university of delaware. Ian appelbaum, university of delaware silicon has been broadly viewed as the ideal material for spintronics due to its low atomic weight, lattice inversion symmetry, and near lack of nuclear spin, resulting in exceptionally long spin lifetime.
Spintronics ian appelbaum, university of delaware on vimeo. Huang, with 6 highly influential citations and 20 scientific research papers. Electrical engineers from the university of delaware and cambridge nanotech have demonstrated for the first time how the spin properties of electrons in silicon. Electrical and computer engineering department, university of delaware, newark, delaware 19716. Intrinsic twodimensional state on the pristine surface of tellurium. The basics of this spinbased electronics technology are discussed and the specific methods necessary for application to silicon are described. Hueso, and ilaria bergenti spin transport in ferromagnetiiiv. In silicon, there are normally equal numbers of spinup and down electrons.
Appelbaum wins nsf career award for research on silicon. Scientists put spin in silicon, advance new age of. Ian appelbaum right, ud assistant professor of electrical and computer engineering, and doctoral student biqin huang are making pioneering discoveries in spintronics, which seeks to harness an electrons spin in addition to its charge to make cheaper, faster, less powerhungry electronics. Wide distribution of final spin angles at detector reduces observed spin coherence injector detector. Researchers put spin in silicon, advance new age of electronics 18 may 2007 the worlds first silicon spintransport devices, fabricated and measured in ian appelbaum s lab at the university. Abstract hot electron injection into uniaxially strained. The goal of spintronics is to use currents with most of the electron spins oriented, or polarized. This includes the observation of spinpolarized electron injection from a ferromagnetic metal to a normal metal by johnson and silsbee 1985 and the discovery of giant magnetoresistance independently by albert fert et al. Electronic measurement and control of spin transport in.
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